MOBILITY OF EDGE DISLOCATIONS ON 112 SLIP PLANES IN 3.25 PERCENT SILICON IRON

被引：69

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作者：

ERICKSON, JS

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来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

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D O I：

10.1063/1.1729004

中图分类号：

O59 [应用物理学];

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页码：2499 / &

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共 34 条

[1] MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS
STEIN, DF
LOW, JR
JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 362 - 369
[2] A STUDY OF 112 EDGE DISLOCATIONS IN BENT SILICON-IRON SINGLE CRYSTALS
HIBBARD, WR
DUNN, CG
ACTA METALLURGICA, 1956, 4 (03): : 306 - 315
[3] CITATION CLASSIC - MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS
STEIN, DF
CURRENT CONTENTS/PHYSICAL CHEMICAL & EARTH SCIENCES, 1980, (32): : 18 - 18
[4] EDGE DISLOCATIONS DISSOCIATED IN (112) PLANES AND TWINNING MECHANISM OF BCC METALS
OGAWA, K
PHILOSOPHICAL MAGAZINE, 1965, 11 (110): : 217 - &
[5] MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS AT 20 DEGREES K
STEIN, DF
LAFORCE, RP
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) : 661 - &
[6] Iron gettering at slip dislocations in Czochralski silicon
Lauer, K.
Herms, M.
Grochocki, A.
Bollmann, J.
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 : 211 - +
[7] MOBILITY OF EDGE DISLOCATIONS ON (110) PLANES IN TUNGSTEN SINGLE CRYSTALS
SCHADLER, HW
ACTA METALLURGICA, 1964, 12 (08): : 861 - &
[8] MOBILITY OF EDGE DISLOCATIONS IN BASAL-SLIP SYSTEM OF ZINC
POPE, DP
VREELAND, T
WOOD, DS
JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) : 4011 - &
[9] DIRECT MEASUREMENT OF MOBILITY OF EDGE AND SCREW DISLOCATIONS IN 3 PERCENT SILICON-IRON BY HIGH-VOLTAGE TRANSMISSION ELECTRON-MICROSCOPY
SAKA, H
IMURA, T
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (03) : 702 - &
[10] ORIENTATION AND TEMPERATURE DEPENDENCE OF PLASTIC DEFORMATION PROCESSES IN 3.25 PERCENT SILICON IRON
HULL, D
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 274 (1356) : 5 - +

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