Interaction of iron donor with transition-metal impurities in silicon

Interstitial iron donor has been studied in thermally quenched p-silicon using deep level transient spectroscopy. It is identified by measurements of a number of its fingerprints including the emission rate signature, its injection-induced production, its enhancement with thermal quenching temperature and as isothermal and isochronal annealing characteristics. Doping with Ag, An, Pd and Pt reveals a remarkable new property of this deep level - its DLTS signal is completely bleached in the presence of these impurities.