Interaction of iron donor with transition-metal impurities in silicon

被引：0
|
作者：
Ali, A
Iqbal, MZ
Barber, N
Gill, AA
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
iron donor; transition-metal doped Si; DLTS;
D O I：
10.4028/www.scientific.net/MSF.196-201.689
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interstitial iron donor has been studied in thermally quenched p-silicon using deep level transient spectroscopy. It is identified by measurements of a number of its fingerprints including the emission rate signature, its injection-induced production, its enhancement with thermal quenching temperature and as isothermal and isochronal annealing characteristics. Doping with Ag, An, Pd and Pt reveals a remarkable new property of this deep level - its DLTS signal is completely bleached in the presence of these impurities.
引用
收藏
页码：689 / 693
页数：5
相关论文
共 50 条
12345