IRREGULAR SHIFTS OF EXCITONIC STATES IN REFLECTIVITY AND PL SPECTRA OF ZNSE CRYSTALS UNDER UNIAXIAL-STRESS

被引：0

作者：

NEGRII, VD

KULAKOV, MP

机构：

[1] Institute of Solid State Physics, Russian Academy of Sciences, Moscow, 142432, Chernogolovka

来源：

ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1995年 / 5卷 / 04期

关键词：

EXCITONS; ZNSE; TWINS; STRAIN;

D O I：

10.1002/amo.860050405

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Splittings and shifts of excitonic states in ZnSe crystals under uniaxial stress along [100], [111] and [110] directions were studied by spatially resolved spectroscopy of both the reflectivity and the photoluminescence (PL) at 5 K. These methods enabled us to check the local strains in different surface microareas of deformed crystals and as a result to reveal the irregular free and bound exciton state shifts related to the influence of the strain non-uniformity and to the presence of structural imperfections (twins) in the crystals. It is shown that elastic deformation of twinned crystals along directions not exactly [111] gives rise to a doublet structure for all the bound exciton lines in the pi spectra. New values of deformation potentials for ZnSe crystals were deduced. The anisotropic influence of the uniaxial stress on the free and bound exciton state splittings was determined.

引用

页码：215 / 221

页数：7

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