MECHANISMS OF GATING IN VOLTAGE-DEPENDENT POTASSIUM CHANNELS

被引：0
|
作者：
ALDRICH, RW
机构：
[1] STANFORD UNIV,SCH MED,HOWARD HUGHES MED INST,STANFORD,CA
[2] STANFORD UNIV,SCH MED,DEPT CELLULAR & MOLEC PHYSIOL,STANFORD,CA
来源：
JOURNAL OF GENERAL PHYSIOLOGY | 1994年 / 104卷 / 06期
关键词：
D O I：
暂无
中图分类号：
Q4 [生理学];
学科分类号：
071003 ;
摘要：
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页码：A2 / A2
页数：1
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