DEPOSITION OF ALN THIN-FILMS BY MAGNETRON REACTIVE SPUTTERING

被引：42

作者：

GEROVA, EV ^{[1
]}

IVANOV, NA ^{[1
]}

KIROV, KI ^{[1
]}

机构：

[1] BULGARIAN ACAD SCI,INST SOLID STATE PHYS,BU-1184 SOFIA,BULGARIA

来源：

THIN SOLID FILMS | 1981年 / 81卷 / 03期

关键词：

D O I：

10.1016/0040-6090(81)90482-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：201 / 206

页数：6

共 19 条

[1]

Arnold H., 1976, Kristall und Technik, V11, P17, DOI 10.1002/crat.19760110104

[2] OPTICAL-PROPERTIES OF ALUMINUM NITRIDE PREPARED BY CHEMICAL AND PLASMACHEMICAL VAPOR-DEPOSITION [J].

BAUER, J ;

BISTE, L ;

BOLZE, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :173-181

[3] GROWTH, CRYSTALLOGRAPHIC AND ELECTRICAL ASSESSMENT OF EPITAXIAL LAYERS OF ALUMINUM NITRIDE ON CORUNDUM SUBSTRATES [J].

CALLAGHAN, MP ;

PATTERSON, E ;

RICHARDS, BP ;

WALLACE, CA .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) :85-98

[4] PREPARATION AND PROPERTIES OF ALUMINUM NITRIDE FILMS [J].

CHU, TL ;

KELM, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :995-1000

[5] RADIOFREQUENCY REACTIVE SPUTTERING FOR DEPOSITION OF ALUMINIUM NITRIDE THINFILMS [J].

DUCHENE, J .

THIN SOLID FILMS, 1971, 8 (01) :69-&

[6]

Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163

[7] PROTECTION OF GASAS, GAALAS AND GAASP BY ALUMINUM NITRIDE DEPOSITED BY REACTIVE SPUTTERING [J].

FAVENNEC, PN ;

HENRY, L ;

JANICKI, T ;

SALVI, M .

THIN SOLID FILMS, 1977, 47 (03) :327-333

[8]

HEIMAN FP, 1965, IEEE T ELECTRON DEV, V12, P65

[9]

KUZNEZOV ON, 1976, FIZ TEKH POLUPROVODN, V11, P2123

[10] CURRENTS THROUGH THIN FILMS OF ALUMINUM NITRIDE [J].

LEWICKI, G ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (07) :1255-&

← 1 2 →