MEASUREMENT OF TRANSPORT PARAMETERS IN HEAVILY-DOPED EMITTERS OF BIPOLAR-TRANSISTORS

被引：2
作者：
POPP, J
WENG, J
机构：
[1] Siemens AG, Corporate Research and Development, Munich
来源：
SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 07期
关键词：
D O I：
10.1016/0038-1101(92)90331-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A complete set of parameters that control the transport of minority carriers in heavily doped n-type Si has been measured by a combination of steady-state and transient electrical techniques on special test transistors with opaque polysilicon emitters of electrical activation N(D) = 1.4 x 10(20) cm-3. Using the frequency dependence of the input admittance, the minority carrier lifetime in the temperature range between 280 and 410 K was found to be constant with a value of 199 ps. The "apparent" bandgap narrowing was measured with a temperature-dependent d.c. method and amounts to 95 meV. Using these values the minority carrier mobility of 162 cm2 Vs-1 was then extracted from the base saturation current.
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页码：999 / 1003
页数：5
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