COMPARISON OF DIPOLE LAYERS, BAND OFFSETS, AND FORMATION ENTHALPIES OF GAAS-ALAS (110) AND (001) INTERFACES

被引:58
作者
BYLANDER, DM
KLEINMAN, L
机构
关键词
D O I
10.1103/PhysRevLett.59.2091
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:2091 / 2094
页数:4
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