ION-BEAM MIXING CHARACTERISTICS OF MOCVD GROWN INGAAS/GAAS SUPERLATTICES

被引：1
作者：
FORBES, DV
COLEMAN, JJ
KLATT, JK
AVERBACK, RS
机构：
[1] UNIV ILLINOIS,MICROELECTR LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 02期
关键词：
INGAAS/GAAS; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); RUTHERFORD BACKSCATTERING (RBS); SECONDARY ION MASS SPECTROSCOPY (SIMS); SUPERLATTICE;
D O I：
10.1007/BF02655265
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ion beam mixing behavior of InGaAs/GaAs strained layer superlattice structures grown by metalorganic chemical vapor deposition was studied using secondary ion mass spectroscopy and Rutherford backscattering channeling. The fluence dependence of intermixing by MeV Kr+ irradiation has been investigated. Significant intermixing occurs for fluences much lower than for similar intermixing in other superlattice systems (i.e. AlAs/GaAs). The intermixing exhibits no temperature dependence for fluences of 2 x 10(15) to 5 x 10(15) cm-2 which sharply contrasts with the behavior of the AlAs/GaAs superlattice system which shows a strong temperature dependence, including a miscibility gap, in the temperature range 523 to 973K. Samples irradiated at 573K retain a high degree of crystallinity when compared to lower temperature irradiations indicating that the InGaAs/GaAs superlattice can be disordered and still retain crystallinity.
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页码：175 / 178
页数：4
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