ENHANCED DISORDERING OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL BY RAPID THERMAL ANNEALING USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER GROWN AT HIGH RF POWER CONDITION

被引：6
作者：
CHOI, WJ
LEE, JI
HAN, IK
KANG, KN
KIM, Y
PARK, HL
CHO, K
机构：
[1] KOREA INST SCI & TECHNOL,SEMICOND MAT LAB,SEOUL 130650,SOUTH KOREA
[2] YONSEI UNIV,DEPT PHYS,SEOUL 120749,SOUTH KOREA
[3] SOGANG UNIV,DEPT PHYS,SEOUL 100611,SOUTH KOREA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1994年 / 13卷 / 05期
关键词：
D O I：
10.1007/BF00420787
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：326 / 328
页数：3
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