SINGLE QUANTUM WELL PHOTOLUMINESCENCE IN ZNSE/GAAS/ALGAAS GROWN BY MIGRATION-ENHANCED EPITAXY

被引：23

作者：

KOBAYASHI, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1235 / 1237

页数：3

共 50 条

[1] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
HORIKOSHI, Y
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179
[2] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[3] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
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[4] MIGRATION-ENHANCED EPITAXY OF GaAs AND AlGaAs.
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[5] Growth of ZnSe/GaAs superlattices by migration-enhanced epitaxy
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[6] GROWTH OF ZNSE/GAAS SUPERLATTICES BY MIGRATION-ENHANCED EPITAXY
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[7] CHARACTERISTICS OF ALGAAS/GAAS HETEROSTRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY AT HIGH-TEMPERATURES
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[8] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAAS-GAAS SINGLE QUANTUM-WELLS GROWN BY MIGRATION-ENHANCED EPITAXY AT 300-DEGREES-C SUBSTRATE-TEMPERATURE
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[9] MISORIENTATION IN GAAS ON SI GROWN BY MIGRATION-ENHANCED EPITAXY
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[10] Misorientation in GaAs on Si grown by migration-enhanced epitaxy
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