Vacancy type defects in GaAs after electron irradiation studied by positron lifetime spectroscopy

被引：2
作者：
Polity, A
Nagel, C
KrauseRehberg, R
机构：
来源：
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷
关键词：
GaAs; electron irradiation; defects; vacancies; positron annihilation;
D O I：
10.4028/www.scientific.net/MSF.196-201.1249
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A systematic study of electron-irradiation induced defects in GaAs was carried out. The irradiation was performed at low temperature (4K) with an incident energy of 2 MeV. Annealing experiments between 90 and 600 K were performed. The defect formation and annealing behaviour in dependence on the fluence (10(15)... 10(19) cm(-2)) were studied in undoped, n- and p-doped GaAs. The Ga monovacancy annealing stage occurs below 100 K. A defect complex, which anneals in a main stage at 300 K, was found in all GaAs-samples after electron irradiation, This defect was assigned to a monovacancy-antisite complex.
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页码：1249 / 1253
页数：5
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