FANO-LIKE RESONANT INTERFERENCE IN RAMAN-SPECTRA OF ELECTRONIC AND LO-VIBRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS

被引：24

作者：

NUNES, LAO ^{[1
]}

IORIATTI, L ^{[1
]}

FLOREZ, LT ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,RED BANK,NJ 07701

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.13011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The asymmetry in the one-phonon Raman lines of a Si:GaAs delta-doped doping superlattice is interpreted as a quantum-mechanical interference process in which an incident photon is inelastically scattered by a resonance excitation composed of a bulk LO one-phonon state mixed to a continuum of electron intersubband transitions. The dependence of the line shape on the frequency as well as on the polarizations relative to the crystal axis of the incident and the inelastically scattered radiation is produced by the difference in Raman-scattering amplitudes associated with each component of the mixed excitation.

引用

页码：13011 / 13014

页数：4

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