NITROGEN-IMPLANTED SIC DIODES USING HIGH-TEMPERATURE IMPLANTATION

被引：64

作者：

GHEZZO, M ^{[1
]}

BROWN, DM ^{[1
]}

DOWNEY, E ^{[1
]}

KRETCHMER, J ^{[1
]}

HENNESSY, W ^{[1
]}

POLLA, DL ^{[1
]}

BAKHRU, H ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期

关键词：

D O I：

10.1109/55.192870

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC microelectronics is rapidly growing to satisfy the demand for high-temperature circuit operation above 200-degrees-C. Ion implantation is important for the fabrication of planar devices and integrated circuits. This paper reports on 6H-SiC diodes fabricated using high-temperature nitrogen implantation up to 1000-degrees-C. These diodes have reverse-bias leakage at 25-degrees-C five orders of magnitude lower than previously published being as low as 5 x 10(-11) A / cm2 at 10 V.

引用

页码：639 / 641

页数：3

共 17 条

[1] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].