ANOMALOUS BEHAVIOR OF ION-IMPLANTED GASB

被引：73
|
作者：
CALLEC, R
FAVENNEC, PN
SALVI, M
LHARIDON, H
GAUNEAU, M
机构：
[1] Centre National d'Etudes des Télécommunications CNET, LAB/OCM, 22301 Lannion, Route de Trégastel
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 15期
关键词：
D O I：
10.1063/1.106173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Anomalous elevations up to 6-mu-m of the ion-implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen was measured in the porous layers but this oxygen is likely not responsible for the swelling. The behavior of implanted GaSb is very similar to that of InSb previously described.
引用
收藏
页码：1872 / 1874
页数：3
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