A NEW TECHNIQUE FOR FABRICATION OF OEIC - THE ETCHED BACK PLANAR PROCESS - AND ITS APPLICATION TO THE FABRICATION OF PLANAR EMBEDDED INP-INGAAS P-I-N-PHOTODIODES

被引：0
|
作者：
SHIMIZU, J
INOMOTO, Y
KIDA, N
TERAKADO, T
SUZUKI, A
机构：
[1] Optoelectronics Research Laboratories, NEC Corporation, Miyamae-ku, Kawasaki 213
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1990年 / 2卷 / 10期
关键词：
D O I：
10.1109/68.60771
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new planarizing technique for fabrication of OEIC's, the etched back planar process, is proposed and developed. This process utilizes a non-selective reactive ion beam etching (RIBE) technique both for semiconductor layers and for photoresist. The technique is applied to the fabrication of a planar InP-InGaAs embedded pin-photodiode. © 1990 IEEE
引用
收藏
页码：721 / 723
页数：3
相关论文
共 6 条
  • [1] FLIP-CHIP PLANAR GAINAS/INP P-I-N PHOTODIODES - FABRICATION AND CHARACTERISTICS
    MAKIUCHI, M
    NORIMATSU, M
    SAKURAI, C
    KONDO, K
    YAMAMOTO, N
    YANO, M
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1995, 13 (11) : 2270 - 2275
  • [2] MONOLITHIC INTEGRATION OF A PLANAR EMBEDDED INGAAS P-I-N DETECTOR WITH INP DEPLETION-MODE FETS
    TELL, B
    LIAO, ASH
    BROWNGOEBELER, KF
    BRIDGES, TJ
    BURKHARDT, G
    CHANG, TY
    BERGANO, NS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2319 - 2321
  • [3] LOCALLY ION-IMPLANTED JFET IN AN INGAAS/INP P-I-N PHOTODIODE LAYER STRUCTURE FOR A MONOLITHICALLY PLANAR INTEGRATED RECEIVER OEIC
    BAUER, JG
    ALBRECHT, H
    HOFFMANN, L
    ROMER, D
    WALTER, JW
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (03) : 253 - 255
  • [4] Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process
    Chen, Yiren
    Zhang, Zhiwei
    Miao, Guoqing
    Jiang, Hong
    Song, Hang
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (02):
  • [5] Large-Area Planar Wavelength-Extended InGaAs p-i-n Photodiodes Using Rapid Thermal Diffusion With Spin-On Dopant Technique
    Huang, Chi-Chen
    Ho, Chong-Long
    Wu, Meng-Chyi
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (08) : 820 - 822
  • [6] 1ST LIFE-TEST RESULTS ON PLANAR P-I-N INGAAS/INP PHOTODIODES PASSIVATED WITH SIO2 OR SINX+ SIO2 OR SINX LAYERS
    RIPOCHE, G
    DECOR, P
    BLANJOT, C
    BOURDON, B
    SALSAC, P
    DUDA, E
    IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 631 - 633
1