GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON

被引：172
作者：
BOWER, RW
MAYER, JW
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 09期
关键词：
D O I：
10.1063/1.1654186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：359 / &
相关论文
共 9 条
[1]  
BOWER RW, UNPUBLISHED
[2]  
GROVE AS, 1967, PHYS TECHNOL S, pCH2
[3]   LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].
HIRAKI, A ;
NICOLET, MA ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&
[4]  
KRICHER CJ, 1971, SOLID STATE ELECTRON, V14, P507
[5]  
Lepselter M. P., 1969, Ohmic contacts to semiconductors, P159
[6]   CHANNELING-EFFECT ANALYSIS OF THIN FILMS ON SILICON - ALUMINUM OXIDE [J].
MITCHELL, IV ;
KAMOSHIDA, M ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4378-+
[7]  
MUTA H, TO BE PUBLISHED
[8]  
RUSCH MVT, 1968, SOLID STATE ELECTRON, V11, P517
[9]  
WALKER GA, 1970, J VAC SCI TECHNOL, V7, P543, DOI [10.1116/1.1315872, 10.1116/1.1315878]
1