An improved large signal model of InP HEMTs

被引：4

作者：

Li, Tianhao ^{[1
]}

Li, Wenjun ^{[1
]}

Liu, Jun ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310037, Zhejiang, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 05期

基金：

中国国家自然科学基金;

关键词：

InP HEMT; large-signal; model;

D O I：

10.1088/1674-4926/39/5/054003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 x 25 mu m x 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I-V, C-V and bias related S parameters accurately.

引用

页数：6

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