SURFACE ELECTRONIC-STRUCTURE OF INSB((111)OVER-BAR)3X3 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY

被引：15
作者：
OLSSON, LO
KANSKI, J
ILVER, L
ANDERSSON, CBM
BJORKQVIST, M
GOTHELID, M
KARLSSON, UO
HAKANSSON, MC
机构：
[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN
[2] LUND UNIV,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 24期
关键词：
D O I：
10.1103/PhysRevB.50.18172
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Valence-band spectra from the sputtered and annealed InSb(1» 1» 1»)3×3 surface in normal emission and in the » M», » M», and »K»azimuths have been measured. Some possible surface bands have been identified, among them one that clearly reflects the 3×3 periodicity of the surface. Core-level spectra of Sb 4d and In 4d were deconvoluted revealing one surface-shifted component for Sb 4d and, surprisingly, no pronounced surface-shifted component for In 4d. Scanning tunneling microscopy images from this surface taken at different biases are presented. It is argued that the surface imaged at high bias is perturbed by the tip. © 1994 The American Physical Society.
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页码：18172 / 18178
页数：7
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