EFFECT OF LATTICE-MISMATCHED GROWTH ON INAS/ALSB RESONANT-TUNNELING DIODES

被引：9
作者：
BROWN, ER
EGLASH, SJ
TURNER, GW
PARKER, CD
PANTANO, JV
CALAWA, DR
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
[2] SDL, Inc., San Jose
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 06期
关键词：
D O I：
10.1109/16.293296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nominally identical InAs/AlSb resonant-tunneling diodes are fabricated on InAs and GaAs substrates to ascertain the effect of dislocations on the resonant-tunneling process. Although the diode on the GaAs substrate had a much higher dislocation density, as evidenced by x-ray diffraction measurements, it displayed only a small decrease in peak-to-valley current ratio.
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收藏
页码：879 / 882
页数：4
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