DESIGN AND SIMULATION OF ELECTROOSMOTIC DRIVEN FLOW IN CROSS CHANNELS

被引：0

作者：

Nedelcu, Oana Tatiana ^{[1
]}

Muller, Raluca ^{[2
]}

Kerkhoff, Hans G. ^{[2
]}

Barber, Robert W. ^{[3
]}

机构：

[1] Natl Inst Res & Dev Microtechnol, Bucharest, Romania

[2] MESA Res Inst Nanotechnol, Testable Design & Testing Nanosyst Grp, Enschede, Netherlands

[3] Ctr Microfluid & Microsyst Modelling, CCLRC Daresbury Lab, Warrington, Cheshire, England

来源：

UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES C-ELECTRICAL ENGINEERING AND COMPUTER SCIENCE | 2010年 / 72卷 / 02期

关键词：

microsystem simulation; electroosmotic flow; FlowFET systems;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A micro-electronic fluidic (MEF) system was designed and simulated. The system consists in cross-channels where the fluid flow is controlled by electroosmotic effect. Electroosmotic simulations were performed to characterize the fluidic Field Effect Transistor (FlowFET) device under fault-free conditions. The FlowFET operates by applying a voltage field from a gate electrode in the insulated side wall of a microchannel to modulate the zeta-potential at the shear plane. The change in.potential can be used to control both the magnitude and direction of the electroosmotic flow in the microchannel array.

引用

页码：131 / 140

页数：10

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