NITROGEN IMPLANTATION IN GAAS1-XPX(X=0.4-0.65)

被引：1

作者：

TAKAI, M

RYSSEL, H

ROSCHENTHALER, D

机构：

来源：

APPLIED PHYSICS | 1980年 / 21卷 / 03期

关键词：

D O I：

10.1007/BF00886174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：241 / 248

页数：8

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