LOW-VOLTAGE, HIGH-SATURATION, OPTICALLY BISTABLE SELF-ELECTRO-OPTIC EFFECT DEVICES USING EXTREMELY SHALLOW QUANTUM-WELLS

被引：41

作者：

MORGAN, RA ^{[1
]}

ASOM, MT ^{[1
]}

CHIROVSKY, LMF ^{[1
]}

FOCHT, MW ^{[1
]}

GLOGOVSKY, KG ^{[1
]}

GUTH, GD ^{[1
]}

PRZYBYLEK, GJ ^{[1
]}

SMITH, LE ^{[1
]}

GOOSSEN, KW ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 09期

关键词：

D O I：

10.1063/1.106341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Symmetric self-electro-optic effect devices (S-SEEDs) using extremely shallow GaAs/Al0.04Ga0.96As multiple quantum wells are demonstrated. By exploiting mainly exciton ionization, rather than the usual quantum-confined Stark shift, room-temperature optical bistability is obtained with no applied bias. The extremely shallow symmetric-SEED (symmetric E-SEED) exhibits contrast ratios (CRs) congruent-to 3.5, with biasses < 5 V, demonstrating system applicability and compatability with electronics. Large system tolerances DELTA-lambda congruent-to 6 nm and maximum bistability loop width congruent-to 70% are also obtained. Moreover, due to fast carrier escape times, the symmetric E-SEED exhibits useful CRs > 2 even at continuous-wave intensities > 70-mu-W/mu-m2.

引用

页码：1049 / 1051

页数：3

共 15 条

[1]

CRAFT NC, 1989, 1989 OSA TECHNICAL D, V9, P334

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