SLATER-KOSTER PARAMETRIZATION FOR SI AND THE IDEAL-VACANCY CALCULATION

被引：66

作者：

PAPACONSTANTOPOULOS, DA ^{[1
]}

ECONOMOU, EN ^{[1
]}

机构：

[1] UNIV VIRGINIA,DEPT PHYS,CHARLOTTESVILLE,VA 22901

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.22.2903

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2903 / 2907

页数：5

共 24 条

[1] EMPIRICAL THIRD NEIGHBOUR LCAO ENERGY BANDS OF SILICON [J].

ALSTRUP, I ;

JOHANSEN, K .

PHYSICA STATUS SOLIDI, 1968, 28 (02) :555-&

[2]

[Anonymous], 1979, GREENS FUNCTIONS QUA

[3]

[Anonymous], ELECTRONIC STRUCTURE

[4] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[5] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979

[6] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1979, 43 (13) :956-959

[7] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[8] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1978, 18 (04) :1780-1789

[9] ELECTRONIC-STRUCTURE OF (111) SURFACE OF SILICON [J].

BORTOLANI, V ;

CALANDRA, C ;

KELLY, MJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (18) :L349-L353

[10] LOCALIZED DEFECTS IN SEMICONDUCTORS [J].

CALLAWAY, J ;

HUGHES, AJ .

PHYSICAL REVIEW, 1967, 156 (03) :860-+

← 1 2 3 →