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- [1] THRESHOLD VOLTAGE SHIFT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C341 - C341TSUKADA, T
- [2] STEP DOPING IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS FOR THRESHOLD VOLTAGE SHIFTSJOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 5058 - 5062MATSUMOTO, TMISHIMA, Y
- [3] THRESHOLD VOLTAGE SHIFT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS DURING PULSE OPERATIONJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3719 - 3723ORITSUKI, RHORII, TSASANO, ATSUTSUI, KKOIZUMI, TKANEKO, YTSUKADA, T
- [4] AMORPHOUS-SILICON THIN-FILM TRANSISTORSJOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 166 : 721 - 726TSUKADA, T
- [5] AMORPHOUS-SILICON THIN-FILM TRANSISTORSJOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS, 1995, 18 (04) : 451 - 460LIN, JLLEE, SC
- [6] HIGH-VOLTAGE AMORPHOUS-SILICON THIN-FILM TRANSISTORSIEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 634 - 644MARTIN, RADACOSTA, VMHACK, MSHAW, JG
- [7] ABOVE THRESHOLD CHARACTERISTICS OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTORSAPPLIED PHYSICS LETTERS, 1984, 45 (11) : 1202 - 1203HYUN, CSHUR, MSHACK, MYANIV, ZCANNELLA, V
- [8] THRESHOLD VOLTAGE SHIFT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION SILICON DIOXIDEAPPLIED PHYSICS LETTERS, 1994, 64 (18) : 2362 - 2363KIM, JHOH, EYYOON, JKPARK, YSHONG, CH
- [9] CAPACITANCE-VOLTAGE CHARACTERISTICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORSJOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 3381 - 3385SHUR, MHACK, MSHAW, JGMARTIN, RA
- [10] AMORPHOUS-SILICON SUPERLATTICE THIN-FILM TRANSISTORSJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L111 - L113TSUKUDE, MAKAMATSU, SMIYAZAKI, SHIROSE, M