DESIGN OF GAAS MESFET OSCILLATOR USING LARGE-SIGNAL S-PARAMETERS

被引：17
作者：
MITSUI, Y
NAKATANI, M
MITSUI, S
机构：
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1977年 / 25卷 / 12期
关键词：
D O I：
10.1109/TMTT.1977.1129260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：981 / 984
页数：4
相关论文
共 11 条
  • [1] ABE H, 1976, IEEE INT SOLID STATE, P164
  • [2] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
    BAECHTOLD, W
    DAETWYLE.K
    FORSTER, T
    MOHR, TO
    WALTER, W
    WOLF, P
    [J]. ELECTRONICS LETTERS, 1973, 9 (10) : 232 - 234
  • [3] BODWAY GE, 1967, MICROWAVE J, V10
  • [4] GAAS MICROWAVE-POWER FET
    FUKUTA, M
    SUYAMA, K
    SUZUKI, H
    ISHIKAWA, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 388 - 394
  • [5] RF AMPLIFIER DESIGN WITH LARGE-SIGNAL S-PARAMETERS
    LEIGHTON, WH
    CHAFFIN, RJ
    WEBB, JG
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) : 809 - 815
  • [6] DEPENDENCE OF GAAS POWER MESFET MICROWAVE PERFORMANCE ON DEVICE AND MATERIAL PARAMETERS
    MACKSEY, HM
    ADAMS, RL
    MCQUIDDY, DN
    SHAW, DW
    WISSEMAN, WR
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) : 113 - 122
  • [7] MAEDA M, 1975, IEEE T MICROWAVE THE, V23
  • [8] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE
    OGAWA, M
    OHATA, K
    FURUTSUKA, T
    KAWAMURA, N
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 300 - 305
  • [9] PERFORMANCE OF GAAS MESFET OSCILLATORS IN FREQUENCY-RANGE 8-25 GHZ
    TSERNG, HQ
    MACKSEY, HM
    SOKOLOV, V
    [J]. ELECTRONICS LETTERS, 1977, 13 (03) : 85 - 86
  • [10] VENDELIN GD, 1975, MICROWAVES JUN, P58
12