SELECTIVE GROWTH OF CUBIC GAN IN SMALL AREAS ON PATTERNED GAAS(100) SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY

被引：19

作者：

NAGAHARA, M ^{[1
]}

MIYOSHI, S ^{[1
]}

YAGUCHI, H ^{[1
]}

ONABE, K ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,MEGURO KU,TOKYO 153,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

CUBIC GAN; METALORGANIC VAPOR PHASE EPITAXY; DMHY (DIMETHYLHYDRAZINE; PATTERNED SUBSTRATE; SELECTIVE GROWTH;

D O I：

10.1143/JJAP.33.694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The metalorganic vapor phase epitaxy growth of cubic GaN in small areas on SiO2-patterned GaAs substrates has been performed. We have succeeded in selective growth without deposition on the SiO2 mask at temperatures between 620 and 675 degrees C. The crystal quality of cubic GaN has been improved through growth in small areas on patterned GaAs substrates. It is found that the grain size becomes larger and the full width at half maximum of the X-ray diffraction peak of cubic GaN becomes narrower on patterned substrates than on unpatterned ones.

引用

页码：694 / 697

页数：4

共 13 条

[1] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].