PT/TI/P-IN0.53GA0.47AS LOW-RESISTANCE NONALLOYED OHMIC CONTACT FORMED BY RAPID THERMAL-PROCESSING

被引：48

作者：

KATZ, A ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

CHU, SNG ^{[1
]}

THOMAS, PM ^{[1
]}

KOSZI, LA ^{[1
]}

LEE, JW ^{[1
]}

RIGGS, VG ^{[1
]}

BROWN, RL ^{[1
]}

NAPHOLTZ, SG ^{[1
]}

ZILKO, JL ^{[1
]}

LAHAV, A ^{[1
]}

机构：

[1] AT&T BELL LABS, READING, PA 19604 USA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2306 / 2308

页数：3

共 18 条

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[6] PT/TI PARA-INGAASP NONALLOYED OHMIC CONTACT FORMED BY RAPID THERMAL-PROCESSING [J].

KATZ, A ;

DAUTREMONTSMITH, WC ;

THOMAS, PM ;

KOSZI, LA ;

LEE, JW ;

RIGGS, VG ;

BROWN, RL ;

ZILKO, JL ;

LAHAV, A .

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[7]

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[8] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

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[9]

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[10]

Nakajima K., 1982, GaInAsP alloy semiconductors, P43

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