NONLINEARITY OF TEMPERATURE RESPONSE OF SILICON P-N-JUNCTION RADIATION DETECTORS OPERATED IN DC MODE

被引：6

作者：

KLEVENHAGEN, SC ^{[1
]}

机构：

[1] LONDON HOSP,DEPT MED PHYS,LONDON E1 2BB,ENGLAND

来源：

PHYSICS IN MEDICINE AND BIOLOGY | 1977年 / 22卷 / 02期

关键词：

D O I：

10.1088/0031-9155/22/2/015

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

引用

页码：353 / 358

页数：6

共 11 条

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[9] INFLUENCE OF TEMPERATURE ON SENSITIVITY OF SILICON SURFACE BARRIER DETECTORS USED FOR X-RAY AND GAMMA-RAY DOSIMETRY [J].

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[10] TEMPERATURE DEPENDENCE OF PHOTOCURRENTS PRODUCED BY X-RAYS AND GAMMA-RAYS IN SILICON RADIATION DETECTORS [J].

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