IMPROVEMENT IN VISIBLE LUMINESCENCE PROPERTIES OF ANODIZED POROUS SILICON BY INDIUM PLATING

被引：13
|
作者：
ITO, T
YONEDA, T
FURUTA, K
HATTA, A
HIRAKI, A
机构：
[1] Department of Electrical Engineering, Osaka University, Suita, Osaka, 565
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 6A期
关键词：
POROUS SILICON; VISIBLE LUMINESCENCE; INDIUM PLATING; PHOTOLUMINESCENCE; DECAY TIME;
D O I：
10.1143/JJAP.34.L649
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Luminescence properties of anodically produced porous silicon (PS) have been improved significantly by depositing In metal into micropores. Thin (similar to 300 nm) PS specimens were electrochemically plated in an indium sulfate solution. Observed room-temperature photoluminescence (PL) is very strong in intensity and narrow in spectral width (greater than or equal to 0.22 eV). Furthermore, the photodarkening phenomenon, one of the problems of anodized PS, can be reduced for the In-plated PS, compared with as-anodized PS, while room-temperature PL decay times (similar to 10(-5) s) are slightly longer for the plated PS than those for as-anodized PS and anodically oxidized PS. Possible reasons for the observed improvements are discussed.
引用
收藏
页码：L649 / L652
页数：4
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