LOW-TEMPERATURE SILICON CRYSTALLIZATION MEDIATED BY COPPER SILICIDE FORMATION IN CU/A-SI-H BILAYERS

被引：7

作者：

ACHETE, CA

FREIRE, FL

MARIOTTO, G

ZANGHELLINI, E

机构：

[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

[2] PONTIFICIA UNIV CATOLICA RIO DE JANEIRO,DEPT FIS,BR-22452970 RIO JANEIRO,BRAZIL

来源：

MATERIALS LETTERS | 1994年 / 18卷 / 04期

关键词：

D O I：

10.1016/0167-577X(94)90235-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu/a-Si:H interfacial reaction and copper silicide mediated crystallization of amorphous silicon have been investigated by a combination of several analytical techniques: atomic force microscopy, scanning electron microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy and nuclear analysis. Si crystallization has been evidenced in samples annealed at 280 degrees C, while the formation of copper silicide occurs at 200 degrees C. The role of hydrogen in the crystallization process is discussed.

引用

页码：218 / 222

页数：5

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