ETCH MECHANISM IN THE LOW REFRACTIVE-INDEX SILICON-NITRIDE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS

被引:36
作者
KUO, Y
机构
[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598
关键词
D O I
10.1063/1.110380
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter the author reports a generalized mechanism for the plasma-enhanced chemical vapor deposition silicon nitride process which includes simultaneous surface deposition and etching reactions. The etching mechanism is caused by the hydrogen plasma in combination with the high plasma potential. For each deposition versus power or refractive index versus power curve there is a critical point which is determined by the critical power W(critical). When the power is lower than W(critical), the process can be explained by conventional deposition mechanisms. When the power is higher than W(critical), the hydrogen etching mechanisms becomes important. W(critical) depends on other process parameters such as the composition of the feeding stream. Experimental results confirmed the hydrogen etching mechanism, which is selective.
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页码:144 / 146
页数:3
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