HIGH-POWER 1.02-MU-M INGAAS ALGAAS STRAINED QUANTUM-WELL LASERS WITH GAINP BURIED WAVE-GUIDES FOR PUMPING PR3+-DOPED OPTICAL-FIBER AMPLIFIER

被引：8

作者：

FUKAGAI, K

CHIDA, H

ISHIKAWA, S

FUJII, H

ENDO, K

机构：

[1] Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Ibaraki, 305, 34, Miyukigaoka

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

SEMICONDUCTOR LASERS; OPTICAL FIBERS; AMPLIFIERS;

D O I：

10.1049/el:19930098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power 1.02 mum single spatial mode laser diodes with low-loss (3.3 cm-1) GaInP buried waveguides have been developed for pumping Pr3+-doped optical fibre amplifiers. A maximum CW light output power of 415 mW and an optical fibre output of 71 mW at 200 mA have been achieved. A preliminary lifetest showed stable operation for over 2300 h under 100 mW CW conditions at 50-degrees-C.

引用

页码：146 / 147

页数：2

共 10 条

[1] 0.98-1.02-MU-M STRAINED INGAAS/ALGAAS DOUBLE-QUANTUM-WELL HIGH-POWER LASERS WITH GAINP BURIED WAVE-GUIDES
ISHIKAWA, S
FUKAGAI, K
CHIDA, H
MIYAZAKI, T
FUJII, H
ENDO, K
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1936 - 1942
[2] 0.98 MU-M STRAINED INGAAS ALGAAS DOUBLE QUANTUM-WELL LASERS WITH A GAINP BURIED WAVE-GUIDE FOR ER3+-DOPED FIBER AMPLIFIERS
ISHIKAWA, S
FUKAGAI, K
FUJII, H
SAITO, T
ENDO, K
NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 383 - 392
[3] HIGH-POWER 0.98 MU-M GAINAS STRAINED QUANTUM WELL LASERS FOR ER-3+-DOPED FIBER AMPLIFIER
OKAYASU, M
TAKESHITA, T
YAMADA, M
KOGURE, O
HORIGUCHI, M
FUKUDA, M
KOZEN, A
OE, K
UEHARA, S
ELECTRONICS LETTERS, 1989, 25 (23) : 1563 - 1565
[4] DEGRADATION BEHAVIOR OF 0.98-MU-M STRAINED-QUANTUM-WELL INGAAS/ALGAAS LASERS UNDER HIGH-POWER OPERATION
FUKUDA, M
OKAYASU, M
TEMMYO, J
NAKANO, J
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 471 - 476
[5] 0.98-MU-M STRAINED QUANTUM-WELL LASERS FOR COUPLING HIGH OPTICAL POWER INTO SINGLE-MODE FIBER
WADA, M
YOSHINO, K
YAMADA, M
TEMMYO, J
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (11) : 953 - 955
[6] HIGH-POWER INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED QUANTUM-WELL LASERS GROWN BY 3 STEP MOVPE
SIN, YK
HORIKAWA, H
NAKAJIMA, M
KAMIJOH, T
ELECTRONICS LETTERS, 1993, 29 (03) : 253 - 255
[7] HIGH-POWER 0.98-MU-M INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS
SIN, YK
HORIKAWA, H
ELECTRONICS LETTERS, 1993, 29 (10) : 920 - 922
[8] STABLE OPERATION (OVER 5000-H) OF HIGH-POWER 0.98-MUM INGAAS GAAS STRAINED QUANTUM-WELL RIDGE WAVE-GUIDE LASERS FOR PUMPING ER3+-DOPED FIBER AMPLIFIERS
OKAYASU, M
FUKUDA, M
TAKESHITA, T
UEHARA, S
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) : 689 - 691
[9] INGAAS-GAAS-INGAP DISTRIBUTED-FEEDBACK BURIED HETEROSTRUCTURE STRAINED-QUANTUM-WELL LASERS FOR HIGH-POWER OPERATION AT 0.98-MU-M
SIN, YK
HORIKAWA, H
KAMIJOH, T
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (09) : 966 - 968
[10] HIGH-POWER OPERATION IN 0.98 MU-M STRAINED-LAYER INGAAS-GAAS SINGLE-QUANTUM-WELL RIDGE WAVE-GUIDE LASERS
TAKESHITA, T
OKAYASU, M
UEHARA, S
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (12) : 849 - 851

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