IMPROVED GAAS-MESFET SIMULATION USING AN ENHANCED SCHOTTKY-BARRIER MODEL

被引：2
|
作者：
MCCARTHY, K
LYDEN, C
KELLY, WM
机构：
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 02期
关键词：
D O I：
10.1016/0038-1101(91)90093-E
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：220 / 222
页数：3
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