LATTICE LOCATION OF LEAD IMPLANTED INTO SILICON AT ROOM-TEMPERATURE

被引：2
|
作者：
CHRISTODOULIDES, CE [1 ]
GRANT, WA [1 ]
WILLIAMS, JS [1 ]
机构：
[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND
来源：
APPLIED PHYSICS | 1977年 / 13卷 / 04期
关键词：
D O I：
10.1007/BF00882616
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：391 / 393
页数：3
相关论文
共 50 条
  • [1] Room-temperature migration of ion-implanted boron in silicon
    Collart, EJH
    Weemers, K
    Gravesteijn, DJ
    van Berkum, JGM
    Cowern, NEB
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 53 - 58
  • [2] ROOM-TEMPERATURE LUMINESCENCE IN SEMIINSULATING POLYCRYSTALLINE SILICON IMPLANTED WITH ER
    LOMBARDO, S
    CAMPISANO, SU
    VANDENHOVEN, GN
    POLMAN, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 378 - 381
  • [3] Boron lattice location in room temperature ion implanted Si crystal
    Piro, AM
    Romano, L
    Mirabella, S
    Grimaldi, MG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 249 - 252
  • [4] Room-temperature electroluminescence from H-plasma-implanted silicon
    Liu, WL
    Kwok, SCH
    Fu, RKY
    Chu, PK
    Hung, TF
    Xu, ZK
    Lin, CL
    Li, KF
    Tam, HL
    Cheah, KW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (12) : L55 - L58
  • [5] Room-temperature coherent control of implanted defect spins in silicon carbide
    Yan, Fei-Fei
    Yi, Ai-Lun
    Wang, Jun-Feng
    Li, Qiang
    Yu, Pei
    Zhang, Jia-Xiang
    Gali, Adam
    Wang, Ya
    Xu, Jin-Shi
    Ou, Xin
    Li, Chuan-Feng
    Guo, Guang-Can
    NPJ QUANTUM INFORMATION, 2020, 6 (01)
  • [6] Room-temperature coherent control of implanted defect spins in silicon carbide
    Fei-Fei Yan
    Ai-Lun Yi
    Jun-Feng Wang
    Qiang Li
    Pei Yu
    Jia-Xiang Zhang
    Adam Gali
    Ya Wang
    Jin-Shi Xu
    Xin Ou
    Chuan-Feng Li
    Guang-Can Guo
    npj Quantum Information, 6
  • [7] ON THE LATTICE LOCATION OF IMPLANTED IMPURITIES IN SILICON
    ANTONCIK, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 14 (02): : 193 - 203
  • [8] LATTICE LOCATION OF CO IMPLANTED IN SILICON
    KOTAI, E
    LOHNER, T
    MANUABA, A
    MEZEY, G
    COUSSEMENT, R
    DEZSI, I
    LANGOUCHE, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 153 - 155
  • [9] Single-mode room-temperature emission with a silicon rod lattice
    Cluzel, B.
    Calvo, V.
    Charvolin, T.
    Picard, E.
    Noe, P.
    Hadji, E.
    APPLIED PHYSICS LETTERS, 2006, 89 (20)
  • [10] ROOM-TEMPERATURE LUMINESCENCE FROM ER-IMPLANTED SEMIINSULATING POLYCRYSTALLINE SILICON
    LOMBARDO, S
    CAMPISANO, SU
    VANDENHOVEN, GN
    CACCIATO, A
    POLMAN, A
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1942 - 1944
12345