ORIGIN OF VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON AS STUDIED BY RAMAN-SPECTROSCOPY

被引：7
作者：
ROY, A
JAYARAM, K
SOOD, AK
机构：
[1] INDIAN INST SCI,SOLID STATE & STRUCT CHEM UNIT,BANGALORE 560012,KARNATAKA,INDIA
[2] INDIAN INST SCI,JAWAHARLAL NEHRU CTR ADV SCI RES,BANGALORE 560012,KARNATAKA,INDIA
来源：
BULLETIN OF MATERIALS SCIENCE | 1994年 / 17卷 / 05期
关键词：
POROUS SILICON; NANOPARTICLES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;
D O I：
10.1007/BF02757897
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we discuss the different models proposed to explain the visible luminescence in porous silicon (PS). We review our recent photoluminescence and Raman studies on PS as a function of different preparation conditions and isochronal thermal annealing. Our results can be explained by a hybrid model which incorporates both nanostructures for quantum confinement and silicon complexes (such as SiHx, and siloxene) and defects at Si/SiO2, interfaces as luminescent centres.
引用
收藏
页码：513 / 522
页数：10
相关论文
共 29 条
  • [1] STABILITY OF VISIBLE LUMINESCENCE FROM POROUS SILICON
    BATSTONE, JL
    TISCHLER, MA
    COLLINS, RT
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2667 - 2669
  • [2] BHAT SV, 1992, P SOLID STATE PHYS S, V35, P198
  • [3] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
    BRANDT, MS
    FUCHS, HD
    STUTZMANN, M
    WEBER, J
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
  • [4] OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY
    BUDA, F
    KOHANOFF, J
    PARRINELLO, M
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1272 - 1275
  • [5] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [6] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [7] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
    CULLIS, AG
    CANHAM, LT
    [J]. NATURE, 1991, 353 (6342) : 335 - 338
  • [8] SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX
    DEAK, P
    ROSENBAUER, M
    STUTZMANN, M
    WEBER, J
    BRANDT, MS
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (17) : 2531 - 2534
  • [9] INFLUENCE OF STRESS ON THE PHOTOLUMINESCENCE OF POROUS SILICON STRUCTURES
    FRIEDERSDORF, LE
    SEARSON, PC
    PROKES, SM
    GLEMBOCKI, OJ
    MACAULAY, JM
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2285 - 2287
  • [10] POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES
    FUCHS, HD
    STUTZMANN, M
    BRANDT, MS
    ROSENBAUER, M
    WEBER, J
    BREITSCHWERDT, A
    DEAK, P
    CARDONA, M
    [J]. PHYSICAL REVIEW B, 1993, 48 (11): : 8172 - 8183
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