INVESTIGATION OF THE UNIFORMITY OF OHMIC CONTACTS TO N-TYPE GAAS FORMED BY RAPID THERMAL-PROCESSING

被引：0
作者：
ZHOU, WY
XU, J
LIOU, YB
HUANG, C
机构：
[1] Department of Graduate Students Lishan Microelectronics Institute P.O. Box 19, Lintong
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期
关键词：
D O I：
10.1016/0038-1101(93)90155-J
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：295 / 296
页数：2
相关论文
共 5 条
[1]   OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION [J].
ALLEN, LH ;
HUNG, LS ;
KAVANAGH, KL ;
PHILLIPS, JR ;
YU, AJ ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1987, 51 (05) :326-327
[2]   RAPID THERMAL ALLOYED OHMIC CONTACT ON INP [J].
BAHIR, G ;
MERZ, JL ;
ABELSON, JR ;
SIGMON, TW .
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :257-262
[3]   RAPID IR LAMP ALLOYING OF NICKEL-BASED OHMIC CONTACTS ON N-GAAS [J].
GILL, SS ;
DAWSEY, JR .
THIN SOLID FILMS, 1988, 167 (1-2) :161-167
[4]   AN IMPROVED AUGE OHMIC CONTACT TO N-GAAS [J].
NATHAN, MI ;
HEIBLUM, M .
SOLID-STATE ELECTRONICS, 1982, 25 (10) :1063-1065
[5]   RAPS - A RAPID THERMAL PROCESSOR SIMULATION PROGRAM [J].
SHIEH, TJ ;
CARTER, RL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) :19-24
1