LASING CHARACTERISTICS OF 1.5-1.6 MU-M GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS

被引:66
作者
UTAKA, K
KOBAYASHI, K
SUEMATSU, Y
机构
关键词
D O I
10.1109/JQE.1981.1071156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:651 / 658
页数:8
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共 27 条
[1]   REFRACTIVE-INDEX OF GA1-XALXAS [J].
AFROMOWITZ, MA .
SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63
[2]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[3]   THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS [J].
ASADA, M ;
ADAMS, AR ;
STUBKJAER, KE ;
SUEMATSU, Y ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :611-619
[4]   ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ .
APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285
[5]   CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS [J].
ITAYA, Y ;
SUEMATSU, Y ;
IGA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) :1057-1058
[6]   LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].
ITAYA, Y ;
SUEMATSU, Y ;
KATAYAMA, S ;
KISHINO, K ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1795-1805
[7]   GAXIN1-XASYP1-Y-INP INJECTION-LASER PARTIALLY LOADED WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTOR [J].
KAWANISHI, H ;
SUEMATSU, Y ;
UTAKA, K ;
ITAYA, Y ;
ARAI, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :701-706
[8]  
KAWANISHI H, 1977, IEEE J QUANTUM ELECT, V12, P64
[9]   SINGLE-MODE SYSTEMS AND COMPONENTS FOR LONGER WAVELENGTHS [J].
KIMURA, T .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1979, 26 (12) :987-1010
[10]   COUPLED-WAVE THEORY OF DISTRIBUTED FEEDBACK LASERS [J].
KOGELNIK, H ;
SHANK, CV .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2327-+