DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY GAAS IMPATT DIODES

被引：10

作者：

SU, S ^{[1
]}

SZE, S ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,COLL ENGN,SEMICONDUCTOR RES LAB,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 06期

关键词：

D O I：

10.1109/T-ED.1973.17695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：541 / 543

页数：3

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