CONTINUOUS TO BOUND INTERBAND-TRANSITIONS IN DELTA-DOPED GAAS-LAYERS

被引：1

作者：

BERNUSSI, AA

BRUM, JA

MOTISUKE, P

BASMAJI, P

LI, MS

HIPOLITO, O

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS GLEB WATAGHIN,DEPT FIS ESTADO SOLIDO & CIENCIAS MAT,BR-13081 CAMPINAS,SP,BRAZIL

[2] UNIV SAO PAULO,INST FIS & QUIM,BR-13560 SAO CARLOS,SP,BRAZIL

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 02期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1016/0749-6036(90)90093-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the interband transitions of several silicon δ-doped GaAs samples using the technique of photoreflectance spectroscopy. The features observed in the optical spectra above the GaAs fundamental energy gap are tentatively attributed to transitions involving continuous valence band states and quantum-confined states at the conduction-band. The observed interband transition energies are in qualitative agreement with the self-consistently calculated ones taking into account the spreading of dopants. © 1990.

引用

页码：205 / 208

页数：4

共 8 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] PHOTOREFLECTANCE MEASUREMENTS ON SI DELTA-DOPED GAAS SAMPLES GROWN BY MOLECULAR-BEAM EPITAXY [J].

BERNUSSI, AA ;

IIKAWA, F ;

MOTISUKE, P ;

BASMAJI, P ;

LI, MS ;

HIPOLITO, O .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) :4149-4151

[3]

BERNUSSI AA, 1990, IN PRESS P SOC PHOTO

[4] MODULATION SPECTROSCOPY AS A TOOL FOR ELECTRONIC MATERIAL CHARACTERIZATION [J].

BOTTKA, N ;

GASKILL, DK ;

SILLMON, RS ;

HENRY, R ;

GLOSSER, R .

JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) :161-170

[5] PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS [J].

GLEMBOCKI, OJ ;

SHANABROOK, BV ;

BOTTKA, N ;

BEARD, WT ;

COMAS, J .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :970-972

[6] EFFECTS OF IMPURITY TRANSITIONS ON ELECTROREFLECTANCE IN THIN EPITAXIAL GAAS AND GA1-XALXAS/GAAS LAYERS [J].

GLEMBOCKI, OJ ;

BOTTKA, N ;

FURNEAUX, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :432-437

[7] CONCLUSIVE EVIDENCE FOR MINIBAND DISPERSION IN THE PHOTOREFLECTANCE OF A GAAS GA0.74AL0.26AS COUPLED MULTIPLE-QUANTUM-WELL STRUCTURE [J].

SHEN, H ;

PAN, SH ;

POLLAK, FH ;

DUTTA, M ;

AUCOIN, TR .

PHYSICAL REVIEW B, 1987, 36 (17) :9384-9387

[8] OPTICAL-ABSORPTION PROFILE OF A SINGLE MODULATION-DOPED ALXGA1-XAS/GAAS HETEROJUNCTION [J].

SNOW, ES ;

GLEMBOCKI, OJ ;

SHANABROOK, BV .

PHYSICAL REVIEW B, 1988, 38 (17) :12483-12486

← 1 →