HETEROEPITAXY OF INP ON SI - REDUCTION OF DEFECTS BY SUBSTRATE MISORIENTATION AND THERMAL ANNEALING

被引：5
作者：
CRUMBAKER, TE
LEE, HY
HAFICH, MJ
ROBINSON, GY
ALJASSIM, MM
JONES, KM
机构：
[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584823
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：261 / 265
页数：5
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