RESIDUAL DEFECTS IN IMPLANTED GAAS AFTER RAPID THERMAL ANNEALING WITH INCOHERENT-LIGHT

被引：1
|
作者：
BAITHER, D [1 ]
PANKNIN, D [1 ]
机构：
[1] ACAD SCI GDR,ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 113卷 / 02期
关键词：
D O I：
10.1002/pssa.2211130210
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：331 / 336
页数：6
相关论文
共 50 条
  • [1] RESIDUAL DEFECTS IN IMPLANTED GAAS AFTER RAPID THERMAL ANNEALING WITH INCOHERENT-LIGHT
    BAITHER, D
    BARTSCH, H
    PANKNIN, D
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 200 - 203
  • [2] RESIDUAL DEFECTS IN IMPLANTED SILICON AFTER ANNEALING WITH INCOHERENT-LIGHT
    BAITHER, D
    KOEGLER, R
    PANKNIN, D
    WIESER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (02): : 767 - 772
  • [3] IMPLANTATION ANNEALING IN GAAS BY INCOHERENT-LIGHT
    DAVIES, DE
    MCNALLY, PJ
    RYAN, TG
    SODA, KJ
    COMER, JJ
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 619 - 625
  • [4] ANNEALING OF PHOSPHORUS IMPLANTED SILICON BY INCOHERENT-LIGHT SCANNING
    CORRERA, L
    PEDULLI, L
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4): : 187 - 190
  • [5] ANNEALING OF ION-IMPLANTED SILICON BY AN INCOHERENT-LIGHT PULSE
    BOMKE, HA
    BERKOWITZ, HL
    HARMATZ, M
    KRONENBERG, S
    LUX, R
    APPLIED PHYSICS LETTERS, 1978, 33 (11) : 955 - 957
  • [6] PULSED INCOHERENT-LIGHT ANNEALING OF ARSENIC AND PHOSPHORUS IMPLANTED POLYCRYSTALLINE SILICON
    KLABES, R
    MATTHAI, J
    VOELSKOW, M
    MUTZE, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 74 (01): : K5 - K7
  • [7] SOLAR-CELLS OBTAINED BY INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS IMPLANTED SILICON
    CORRERA, L
    PASINI, A
    MORETTINI, L
    PEDULLI, L
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (08): : L508 - L510
  • [8] INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS IMPLANTED SILICON, WITH SOLAR-CELL PRODUCTION IN VIEW
    NIELSEN, LD
    LARSEN, AN
    BORISENKO, VE
    JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 381 - 387
  • [9] RESIDUAL DEFECTS AFTER LIGHT-PULSE ANNEALING OF IMPLANTED SILICON
    BAITHER, D
    PANKNIN, D
    WIESER, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02): : 679 - 685
  • [10] CW INCOHERENT-LIGHT ANNEALING FOR VLSI APPLICATION
    KWOR, R
    KWONG, DL
    STANCHINA, W
    ARAUJO, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C328
12345