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LIFETIME CONTROL BY PALLADIUM DIFFUSION IN SILICON
被引:15
作者
:
SO, L
论文数:
0
引用数:
0
h-index:
0
SO, L
WHITELEY, JS
论文数:
0
引用数:
0
h-index:
0
WHITELEY, JS
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1978年
/ 21卷
/ 06期
关键词
:
D O I
:
10.1016/0038-1101(78)90314-3
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:887 / 890
页数:4
相关论文
共 7 条
[1]
COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
;
SUN, E
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
SUN, E
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(06)
:685
-688
[2]
BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5
[3]
CONTROL OF DIFFUSED DIODE RECOVERY TIME THROUGH GOLD DOPING
[J].
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
;
GOKHALE, BV
论文数:
0
引用数:
0
h-index:
0
GOKHALE, BV
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:905
-+
[4]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
[J].
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
:8
-&
[5]
PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON
[J].
LISIAK, KP
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
LISIAK, KP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
MILNES, AG
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
:5229
-5235
[6]
ENERGY-LEVELS OF PALLADIUM IN SILICON
[J].
SO, L
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
SO, L
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:113
-117
[7]
ELECTRONIC PROPERTIES OF SILICON DOPED WITH SILVER
[J].
THIEL, FL
论文数:
0
引用数:
0
h-index:
0
THIEL, FL
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
:254
-&
←
1
→
共 7 条
[1]
COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
[J].
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
BALIGA, BJ
;
SUN, E
论文数:
0
引用数:
0
h-index:
0
机构:
GE,CTR RES & DEV,SCHENECTADY,NY 12301
SUN, E
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(06)
:685
-688
[2]
BALIGA BJ, 1977, SOLID STATE ELECTRON, V20, P225, DOI 10.1016/0038-1101(77)90188-5
[3]
CONTROL OF DIFFUSED DIODE RECOVERY TIME THROUGH GOLD DOPING
[J].
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
;
GOKHALE, BV
论文数:
0
引用数:
0
h-index:
0
GOKHALE, BV
.
SOLID-STATE ELECTRONICS,
1966,
9
(09)
:905
-+
[4]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
[J].
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
:8
-&
[5]
PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON
[J].
LISIAK, KP
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
LISIAK, KP
;
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
机构:
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
MILNES, AG
.
JOURNAL OF APPLIED PHYSICS,
1975,
46
(12)
:5229
-5235
[6]
ENERGY-LEVELS OF PALLADIUM IN SILICON
[J].
SO, L
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
SO, L
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GHANDHI, SK
.
SOLID-STATE ELECTRONICS,
1977,
20
(02)
:113
-117
[7]
ELECTRONIC PROPERTIES OF SILICON DOPED WITH SILVER
[J].
THIEL, FL
论文数:
0
引用数:
0
h-index:
0
THIEL, FL
;
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
.
JOURNAL OF APPLIED PHYSICS,
1970,
41
(01)
:254
-&
←
1
→