AUGER RECOMBINATION RATE IN INGAASP LASERS

被引：11

作者：

BURT, MG

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 19期

关键词：

D O I：

10.1049/el:19820548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：806 / 807

页数：2

共 12 条

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[3] INTERBAND AUGER RECOMBINATION IN INGAASP [J].

CHIU, LC ;

CHEN, PC ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) :938-941

[4] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y [J].

DUTTA, NK ;

NELSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :74-92

[5] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

HORIKOSHI, Y ;

FURUKAWA, Y .

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[6] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

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[7]

POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20

[8] MEASUREMENT OF RADIATIVE AND AUGER RECOMBINATION RATES IN P-TYPE INGAASP DIODE-LASERS [J].

SU, CB ;

SCHLAFER, J ;

MANNING, J ;

OLSHANSKY, R .

ELECTRONICS LETTERS, 1982, 18 (14) :595-596

[9] BAND-TO-BAND AUGER RECOMBINATION IN INGAASP LASERS [J].

SUGIMURA, A .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :21-23

[10] DISORDER-ENHANCED AUGER RECOMBINATION IN III-V ALLOYS [J].

TAKESHIMA, M .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6118-6124

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