STRUCTURAL STUDIES OF REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS

被引：72
作者：
KUMAR, S
TANSLEY, TL
机构：
[1] Semiconductor Science and Technology Laboratories, Physics Department, Macquarie University, Sydney
来源：
THIN SOLID FILMS | 1995年 / 256卷 / 1-2期
关键词：
INFRARED SPECTROSCOPY; NITRIDES; RAMAN SCATTERING; SPUTTERING; X-RAY PHOTOELECTRON SPECTROSCOPY;
D O I：
10.1016/0040-6090(94)06294-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of reactively sputtered carbon nitride thin films has been investigated using infrared, Raman and X-ray photoelectron spectroscopies. The presence of infrared and Raman active C-N vibrational bands and the chemical shifts of the C Is and N Is photoelectron levels observed in our films reveal that the nitrogen atoms incorporated in the films are chemically bonded to the carbon atoms.
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页码：44 / 47
页数：4
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