ATOMIC LAYER EPITAXY OF INP USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE

被引：7

作者：

PAN, N ^{[1
]}

CARTER, J ^{[1
]}

HEIN, S ^{[1
]}

HOWE, D ^{[1
]}

GOLDMAN, L ^{[1
]}

KUPFERBERG, L ^{[1
]}

BRIERLEY, S ^{[1
]}

HSIEH, KC ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90127-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy (ALE) growth of InP was investigated using trimethylindium (TMI) and tertiarybutylphosphine (TBP) in a horizontal atmospheric reactor. The studied growth parameters were exposure times, TMI and TBP fluxes, and growth temperature. Self-limiting ALE growth of InP was achieved at a growth temperature of 340-degrees-C. Substantial increases in the TMI flux and higher growth temperatures exceeding 340-degrees-C resulted in growth rates exceeding 1 monolayer per cycle. Uniform ALE InP layers were verified by cross-sectional transmission electron micrography and sputtered Auger profiling. The application of thin ALE InP layers (15 angstrom) on GaAs surfaces was investigated using X-ray photoelectron spectroscopy, 77 K photoluminescence, and 300 K photoreflectance. The absence of arsenic oxide and an increase in the photoluminescence intensity by a factor of 2 were observed after InP passivation.

引用

页码：64 / 69

页数：6

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