SPATIAL CONFINEMENT OF MISFIT DISLOCATIONS AT THE INTERFACE OF CDSE/GAAS(111)

被引：13

作者：

GRUN, M ^{[1
]}

KLINGSHIRN, C ^{[1
]}

ROSENAUER, A ^{[1
]}

ZWECK, J ^{[1
]}

GEBHARDT, W ^{[1
]}

机构：

[1] UNIV REGENSBURG,INST SOLID STATE PHYS,D-93040 REGENSBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution electron microscopy of wurtzite type CdSe epilayers grown on (111) GaAs revealed that interfacial misfit dislocations are perfect 60-degrees dislocations with Burgers vectors parallel to the interface. Glide is therefore limited to the (0001) interface plane and the extension of dislocations into the epilayer is suppressed. Single-beam bright field imaging shows that the 7% mismatched epilayer is free of a dislocation network in its volume.

引用

页码：2947 / 2948

页数：2

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