NEW DEGRADATION MECHANISM ASSOCIATED WITH HYDROGEN IN BIPOLAR-TRANSISTORS UNDER HOT-CARRIER STRESS

被引：24

作者：

GOPI, PK ^{[1
]}

LI, GP ^{[1
]}

SONEK, GJ ^{[1
]}

DUNKLEY, J ^{[1
]}

HANNAMAN, D ^{[1
]}

PATTERSON, J ^{[1
]}

WILLARD, S ^{[1
]}

机构：

[1] SILICON SYST INC,TUSTIN,CA 92680

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed drift in emitter-base breakdown voltage (V(ebo)) is found to be well correlated to changes in forward base (I(b)) and collector (I(c)) currents. The model of hydrogen release from the Si-SiO2 interface and its subsequent passivation of base dopants during hot carrier stress is proposed to account for such a correlation.

引用

页码：1237 / 1239

页数：3

共 11 条

[1] MODELING HOT-CARRIER EFFECTS IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J].