LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON

被引：41

作者：

JOUSSE, D ^{[1
]}

BASSET, R ^{[1
]}

DELIONIBUS, S ^{[1
]}

BOURDON, B ^{[1
]}

机构：

[1] CRCGE,LAB MARCOUSSIS,F-91460 MARCOUSSIS,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 02期

关键词：

D O I：

10.1063/1.91827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：208 / 211

页数：4

共 15 条

[1]

ADLER D, 1978, PHYS REV LETT, V41, P1775

[2]

ALLAN DC, 1980, PHYS REV LETT, V44, P43, DOI 10.1103/PhysRevLett.44.43

[3] SPECTRAL RESPONSE OF METAL-AMORPHOUS SILICON BARRIERS AND HOLE DRIFT MOBILITY [J].

BASSET, R ;

VIKTOROVITCH, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02) :495-499

[4]

BOURDON B, 1977, 6TH P INT C CHEM VAP, P220

[5]

Carlson D. E., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P893

[6] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].

FISCH, R ;

LICCIARDELLO, DC .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891

[7] LIGHT-INDUCED AGING EFFECTS IN SCHOTTKY DIODES ON SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SIH) - INTERPRETATION OF THE PHOTO-VOLTAIC STABILITY [J].

JOUSSE, D ;

VIKTOROVITCH, P ;

VIEUXROCHAZ, L ;

CHENEVASPAULE, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :767-772

[8]

JOUSSE D, 1979, THESIS GRENOBLE U

[9] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[10] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294

← 1 2 →