ON THE TRANSITION TO METALLIC CONDUCTION IN SEMICONDUCTORS

被引:484
|
作者
MOTT, NF
机构
关键词
D O I
10.1139/p56-151
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1356 / 1368
页数:13
相关论文
共 50 条
  • [31] INTRINSIC DEFECT CONDUCTION OF SEMICONDUCTORS
    VINETSKI.VL
    KHOLODAR, GA
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2759 - &
  • [32] Nonmonotonic anisotropy in charge conduction induced by antiferrodistortive transition in metallic SrTiO3
    Tao, Qian
    Loret, Bastien
    Xu, Bin
    Yang, Xiaojun
    Rischau, Carl Willem
    Lin, Xiao
    Fauque, Benoit
    Verstraete, Matthieu J.
    Behnia, Kamran
    PHYSICAL REVIEW B, 2016, 94 (03)
  • [33] Bipolar Conduction as the Possible Origin of the Electronic Transition in Pentatellurides: Metallic vs Semiconducting Behavior
    Shahi, P.
    Singh, D. J.
    Sun, J. P.
    Zhao, L. X.
    Chen, G. F.
    Lv, Y. Y.
    Li, J.
    Yan, J. -Q.
    Mandrus, D. G.
    Cheng, J. -G.
    PHYSICAL REVIEW X, 2018, 8 (02):
  • [34] CONDUCTION ELECTRON-CONCENTRATION JUMP IN DOPED SEMICONDUCTORS INDUCED BY A METAL-INSULATOR-TRANSITION
    MIKHEEV, VM
    FIZIKA TVERDOGO TELA, 1993, 35 (09): : 2410 - 2417
  • [35] BAND CONDUCTION AND FLUCTUATIONS IN POLYMERIC SEMICONDUCTORS
    BURGESS, RE
    JOURNAL OF POLYMER SCIENCE PART C-POLYMER SYMPOSIUM, 1967, (17PC): : 51 - &
  • [36] HOPPING CONDUCTION IN AMORPHOUS-SEMICONDUCTORS
    GRANT, AJ
    DAVIS, EA
    SOLID STATE COMMUNICATIONS, 1974, 15 (03) : 563 - 566
  • [37] ELECTRICAL CONDUCTION AND SWITCHING IN AMORPHOUS SEMICONDUCTORS
    HAMAGUCH.C
    SASAKI, Y
    NAKAI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (10) : 1195 - &
  • [38] CONDUCTION IN RELAXATION-CASE SEMICONDUCTORS
    DOHLER, GH
    HEYSZENAU, H
    PHYSICAL REVIEW LETTERS, 1973, 30 (24) : 1200 - 1202
  • [39] THE THEORY OF ELECTRIC CONDUCTION OF DISORDERED SEMICONDUCTORS
    BONCHBRUYEVICH, VL
    NGUYET, TTB
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (05): : 51 - 53
  • [40] EXTRINSIC CONDUCTION IN MODIFIED GLASSY SEMICONDUCTORS
    GELMONT, BL
    TSENDIN, KD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (06): : 655 - 657